Design of High-Power High-Efficiency Broadband GaN HEMT Power Amplifier for S Band Applications using Load-Pull Technique
نویسندگان
چکیده
This work reveals the design for broadband high-power high-efficiency GaN HEMT power amplifier, operating in frequency band ranging from 2.15 GHz to 2.65 GHz. The proposed structure is implemented using Cree CGH40010 transistor. and performances over bandwidth are achieved load-pull technique. amplifier unconditionally stable entire band. With neatly designed matching circuits, introduced shows an excellent input/output matching. simulated results show a flat gain of 15 dB with output 1-dB compression point 14 dB. In terms largesignal performance, reaches saturated 41.3 dBm (~13.6 Watts) PAE 64% drain efficiency 72%. achieves linearity third order two-tone intercept TOI 48 dBm.
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ژورنال
عنوان ژورنال: ITM web of conferences
سال: 2022
ISSN: ['2271-2097', '2431-7578']
DOI: https://doi.org/10.1051/itmconf/20224802004